irfhm3911trpbf hexfet ? power mosfet notes ? through ? are on page 9 absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 3.2 a i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 11 ? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 6.6 i dm pulsed drain current ? 36 p d @t a = 25c power dissipation ? 2.8 w p d @t c(bottom) = 25c power dissipation 29 linear derating factor 0.023 w/c t j operating junction and -55 to + 150 c t stg storage temperature range i d @ t c = 25c continuous drain current, v gs @ 10v (source bonding technology limited) 20? v dss 100 v r ds(on) max (@v gs = 10v) 115 ? m ??? qg (typical) 17 ? nc i d (@t c (bottom) = 25c) 11 ? a applications ?? poe+ power sourcing equipment switch base part number package type standard pack orderable part number ? ? form quantity IRFHM3911PBF pqfn 3.3mm x 3.3mm tape and reel 4000 irfhm3911trpbf features benefits low thermal resistance to pcb enable better thermal dissipation low profile (<1.05mm) increased power density industry-standard pinout results in multi-vendor compatibility compatible with existing surface mount techniques ?? easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability large safe operating area (soa) increased ruggedness pqfn 3.3x3.3 mm ? s g s s d d d d d ? 1 www.irf.com ? 2014 international rectifier submit datasheet feedback july 1, 2014
? irfhm3911trpbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback july 1, 2014 d s g static @ t j = 25c (unless otherwise specified) ???? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient ??? 111 ??? mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 92 115 m ? v gs = 10v, i d = 6.3a ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 35a ? v gs(th) gate threshold voltage coefficient ??? -7.6 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v gfs forward transconductance 20 ??? ??? s v ds = 25v, i d = 6.3a q g total gate charge ??? 17 26 q gs1 pre-vth gate-to-source charge ??? 2.5 ??? ? v ds = 50v q gs2 post-vth gate-to-source charge ??? 1.4 ??? nc v gs = 10v q gd gate-to-drain charge ??? 5.4 ??? ? i d = 6.3a q godr gate charge overdrive ??? 7.7 ??? ? q sw switch charge (q gs2 + q gd ) ??? 6.8 ??? ? q oss output charge ??? 5.9 ??? nc v ds = 16v, v gs = 0v r g gate resistance ??? 3.8 ??? ? ? t d(on) turn-on delay time ??? 5.0 ??? v dd = 50v, v gs = 10v t r rise time ??? 5.8 ??? ns i d = 6.3a t d(off) turn-off delay time ??? 16 ??? ? r g =1.8 ? t f fall time ??? 5.1 ??? ? c iss input capacitance ??? 760 ??? v gs = 0v c oss output capacitance ??? 73 ??? pf v ds = 50v c rss reverse transfer capacitance ??? 13 ??? ? ? = 1.0mhz avalanche characteristics ???? parameter typ. max. e as single pulse avalanche energy ? ??? 41 i ar avalanche current ? ??? 6.3 diode characteristics ???? parameter min. typ. max. units conditions i s continuous source current ??? ??? 11 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 36 integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 6.3a, v gs = 0v ? t rr reverse recovery time ??? 47 71 ns t j = 25c, i f = 6.3a, v dd = 50v q rr reverse recovery charge ??? 381 571 nc di/dt = 500a/s ? ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? ??? 4.3 r ? jc (top) junction-to-case ? ??? 40 c/w r ? ja junction-to-ambient ? ??? 45 r ? ja (<10s) junction-to-ambient ? ??? 31 thermal resistance
? irfhm3911trpbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback july 1, 2014 fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.0v 4.5v bottom 4.0v ? 60s pulse width tj = 25c 4.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.0v 4.5v bottom 4.0v ? 60s pulse width tj = 150c 4.0v 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 6.5a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 6.3a
? irfhm3911trpbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback july 1, 2014 fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage fig 9. maximum drain current vs. case temperature fig 10. drain-to-source breakdown voltage fig 11. maximum effective transient thermal impedance, junction-to-case 25 50 75 100 125 150 t c , case temperature (c) 0 2 4 6 8 10 12 - i d , d r a i n c u r r e n t ( a ) 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a in c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 35a i d = 250a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 1000 v ds , drain-tosource voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec 100sec dc operation in this area limited by r ds (on)
? irfhm3911trpbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback july 1, 2014 fig 12. on? resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current fig 14. typical avalanche current vs. pulsewidth 4 8 12 16 20 v gs , gate-to-source voltage (v) 50 100 150 200 250 300 350 400 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e (m ? ) t j = 25c t j = 125c i d = 6.3a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.4a 2.7a bottom 6.3a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.01 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) duty cycle = single pulse
? irfhm3911trpbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback july 1, 2014 fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 18. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 19. gate charge waveform fig 17a. switching time test circuit fig 17b. switching time waveforms fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms vdd ?
? irfhm3911trpbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback july 1, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 3.3 x 3.3 package details pqfn 3.3 x 3.3 part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf
? irfhm3911trpbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback july 1, 2014 pqfn 3.3 x 3.3 tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimension design to accommodate the component width dimension design to accommodate the component lenght dimension design to accommodate the component thickness pitch between successive cavity centers overall width of the carrier tape bo w p 1 ao ko dimension (mm) code min max dimension (inch) min max 3.50 3.70 .138 .146 1.10 1.30 7.90 8.10 .043 .051 11.80 12.20 .311 .319 12.30 12.50 .465 .480 .484 .492 3.50 3.70 .138 .146 description w 1 qty 4000 reel diameter 13 inches ? ? ?
? irfhm3911trpbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback july 1, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? ? qualification level ? moisture sensitivity level pqfn 3.3mm x 3.3mm msl1 (per jedec j-std-020d ??) rohs compliant yes industrial (per jedec jesd47f ?? guidelines) ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release. notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 2.06mh, r g = 50 ? , i as = 6.3a. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at tj of approximately 90c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ? calculated continuous current based on ma ximum allowable junction temperature. ? current is limited to 20a by source bonding technology. revision history date comments 6/5/14 ?? updated schematic on page 1 ?? updated tape and reel on page 8 7/1/14 ?? remove ?sawn? package outline on page 7.
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